ZXMN10A08G
规格信息:

Rohs:Lead free / RoHS Compliant

标准包装:1,000

FET 型 :MOSFET N-Channel, Metal Oxide

FET特点:Logic Level Gate

漏极至源极电压(VDSS):100V

电流-连续漏极(编号)@ 25°C:2A

Rds(最大)@ ID,VGS:250 mOhm @ 3.2A, 10V

VGS(TH)(最大)@ Id:2V @ 250µA

栅极电荷(Qg)@ VGS:7.7nC @ 10V

输入电容(Ciss)@ Vds的:405pF @ 50V

功率 - 最大:2W

安装类型 :Surface Mount

包/盒 :TO-261-4, TO-261AA

供应商器件封装:SOT-223

包装材料 :Tape & Reel (TR)

FET Feature:Logic Level Gate

Packaging:Tape & Reel (TR)

Mounting Type:Surface Mount

Current - Continuous Drain (Id) @ 25° C:2A (Tc)

Vgs(th) (Max) @ Id:2V @ 250µA

Supplier Device Package:SOT-223

Rds On (Max) @ Id, Vgs:250 mOhm @ 3.2A, 10V

FET Type:MOSFET N-Channel, Metal Oxide

Power - Max:2W

Standard Package:1,000

Drain to Source Voltage (Vdss):100V

Input Capacitance (Ciss) @ Vds:405pF @ 50V

Gate Charge (Qg) @ Vgs:7.7nC @ 10V

Package/Case:TO-261-4, TO-261AA

Other Names:ZXMN10A08GCT

rohs:Lead free / RoHS Compliant

型号功能描述生产厂商厂商LOGOPDF大小PDF页数下载地址相关型号第一页预览产品购买
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ZXMN10A08GTA100V SOT223 N-channel enhancement mode MOSFET ZETEX[Zetex Semiconductors]ZETEX[Zetex Semiconductors]的LOGO-天天IC网440.32 Kbytes共8页ZXMN10A08GTA的PDF地址IXTQ50N20P,PJP75N75,APM7312,2N6796,PJD15N06L,PJD09N03,PJD03N03,PJD06N03,PJP75N06,IRF630FI ZXMN10A08GTA的PDF第一页预览图片 产品购买
ZXMN10A08GTA100V SOT223 N-channel enhancement mode MOSFET DIODES[Diodes Incorporated]DIODES[Diodes Incorporated]的LOGO-天天IC网447.16 Kbytes共8页ZXMN10A08GTA的PDF地址 ZXMN10A08GTA的PDF第一页预览图片 产品购买
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