R07DS0720EJ0100 Rev.1.00 Page 1 of 5
Mar 30, 2012
Data Sheet
N0202R
PNP SILICON EPITAXIAL TRANSISTOR
FEATURES
Complements to N0202S.
V
CEO
= 20 V
I
C(DC)
= 2.0 A
Miniature package SOT-23F (2SB1114: Package variation of 3pPoMM)
PRODUCT LINEUP
Part Number Packing Package Name Package Code Mass [TYP.]
N0202R-T1-AT Tape 3000p/reel SOT-23F PVSF0003ZA-A 0.0126g
ABSOLUTE MAXIMUM RATINGS (T
a
= 25C)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
20 V
Collector to Emitter Voltage V
CEO
20 V
Emitter to Base Voltage V
EBO
6.0 V
Collector Current (DC) I
C(DC)
2.0 A
Collector Current (pulse) *
1
I
C(pulse)
3.0 A
Total Power Dissipation P
T1
0.2 W
Total Power Dissipation *
2
P
T2
1.0 W
Junction Temperature T
j
150 C
Storage Temperature T
stg
55 to 150 C
Note *1. PW 10 ms, Duty Cycle 50%
*2. FR-4 board size 2500 mm
2
1.6 mm, t 5 sec
ELECTRICAL CHARACTERISTICS (T
a
= 25C)
Parameter Symbol Condition MIN. TYP. MAX. Unit
Collector Cutoff Current I
CBO
V
CB
= 16 V, I
E
= 0 100 nA
Emitter Cutoff Current I
EBO
V
EB
= 6.0 V, I
C
= 0 100 nA
DC Current Gain
h
FE1
*
1
V
CE
= 2.0 V, I
C
= 100 mA 135 350 600
DC Current Gain
h
FE2
*
1
V
CE
= 2.0 V, I
C
= 2.0 A 40
Collector Saturation Voltage
V
CE(sat)
*
1
I
C
= 1.5 A, I
B
= 50 mA 0.3 0.5 V
Base Saturation Voltage
V
BE(sat)
*
1
I
C
= 1.5 A, I
B
= 50 mA 1.05 1.2 V
Base to Emitter Voltage
V
BE
*
1
V
CE
= 6 V, I
C
= 100 mA 650 680 750 mV
Gain Bandwidth Product f
T
V
CE
= 6.0 V, I
E
= 10 mA 90 MHz
Output Capacitance C
ob
V
CB
= 10.0 V, I
E
= 0, f = 1.0 MHz 55 pF
Note *1. Pulsed
h
FE
Classification
Marking ZM ZL ZK
hFE1 135 to 270 200 to 400 300 to 600
R07DS0720EJ0100
Rev.1.00
Mar 30, 2012
