R07DS0718EJ0100 Rev.1.00 Page 1 of 4
Mar 30, 2012
Data Sheet
N0201R
PNP SILICON EPITAXIAL TRANSISTOR
FEATURES
Complements to N0201S.
V
CEO
= 25 V
I
C(DC)
= 1.0 A
Miniature package SOT -2 3F (2SB 79 8: Pac ka ge variat i o n of 3p PoM M)
PRODUCT LINEUP
Part Number Packing Package Name Package Code Mass [TYP.]
N0201R-T1-AT Tape 3000p/reel SOT-23F PVSF0003ZA-A 0.0126g
ABSOLUTE MAXIMUM RATINGS (T
a
= 25C)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
30 V
Collector to Emitter Voltage V
CEO
25 V
Emitter to Base Voltage V
EBO
5.0 V
Collector Current (DC) I
C(DC)
1.0 A
Collector Current (pulse) *
1
I
C(pulse)
1.5 A
Total Power Dissipation P
T1
0.2 W
Total Power Dissipation *
2
P
T2
1.0 W
Junction Temperature T
j
150 C
Storage Temperature T
stg
55 to 150 C
Note *1. PW 10 ms, Duty Cycle 50%
*2. FR-4 board size 2500 mm
2
1.6 mm, t 5 sec
ELECTRICAL CHARACTERISTICS (T
a
= 25C)
Parameter Symbol Condition MIN. TYP. MAX. Unit
Collector Cutoff Current I
CBO
V
CB
= 30 V, I
E
= 0 100 nA
Emitter Cutoff Current I
EBO
V
EB
= 5.0 V, I
C
= 0 100 nA
DC Current Gain
h
FE1
*
1
V
CE
= 1.0 V, I
C
= 100 mA 90 200 400
DC Current Gain
h
FE2
*
1
V
CE
= 1.0 V, I
C
= 1.0 A 50 100
Collector Saturation Voltage
V
CE(sat)
*
1
I
C
= 1.0 A, I
B
= 100 mA 0.25 0.4 V
Base Saturation Voltage
V
BE(sat)
*
1
I
C
= 1.0 A, I
B
= 100 mA 1.0 1.2 V
Base to Emitter Voltage
V
BE
*
1
V
CE
= 6.0 V, I
C
= 10 mA 600 640 700 mV
Gain Bandwidth Product f
T
V
CE
= 6.0 V, I
E
= 10 mA 90 MHz
Output Capacitance C
ob
V
CB
= 10.0 V, I
E
= 0, f = 1.0 MHz 27 pF
Note *1. Pulsed
h
FE
Classification
Marking DM DL DK
hFE1 90 to 180 135 to 270 200 to 400
R07DS0718EJ0100
Rev.1.00
Mar 30, 2012