SMD Type
Transistors
1
www.kexin.com.cn
NPN Epitaxial Silicon Transistor
KSC2881
Features
Collector-Emitter Voltage : VCEO=120V
Current Gain Bandwidth Productor : fT=120MHz
Collector Dissipation : PC=1 to 2W in Mounted on Ceramic Board
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage V
CBO 120 V
Collector-Emitter Voltage V
CEO 120 V
Emitter-Base Voltage V
EBO 5V
Collector Current I
C 800 mA
Base Current I
B 160 mA
P
C 500 mW
P
C* 1,000 mW
Junction Temperature T
J 150
Storage Temperature TSTG -55to+150
* Mounted on Ceramic Board (250mm
2
X0.8mm)
Collector Power Dissipation
Electrical Characteristics Ta = 25
Parameter Symbol Testconditons Min Typ Max Unit
Collector-Emitter Breakdown Voltage B
VCEO IC=10ìA, IB=0 120 V
Emitter-Base Breakdown Voltage B
VEBO IE=1mA, IC=0 5 V
Collector Cut-off Current I
CBO VCB=120V, IE=0 100 nA
Emitter Cut-off Current I
EBO VBE=5V, IC=0 100 nA
DC Current Gain h
FE VCE=5V, IC=100mA 80 240
Collector-Emitter Saturation Voltage V
CE (sat) IC=500mA, IB=50mA 1.0 V
Base-Emitter On Voltage V
BE (on) VCE=5V, IC=500mA 1.0 V
Current Gain Bandwidth Product f
T VCE=5V, IC=100mA 120 MHz
Output Capacitance C
ob VCB=10V, IE=0, f=1MHz 30 pF
hFE Classification
Marking SCO SCY
Rank O Y
Type
80
160 120 240