©2000 Fairchild Semiconductor International Rev. A, February 2000
KSC2690/2690A
NPN Epitaxia l Si licon Transistor
Absolute Maximu m Rating s
T
C
=25°C unless otherwise noted
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
FE
Classificntion
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: KSC2690
: KSC2690A
120
160
V
V
V
CEO
Collector- Emitter Voltage
: KSC2690
: KSC2690A
120
160
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 1.2 A
I
CP
*Collector Current (Pulse) 2.5 A
I
B
Base Current(DC) 0.3 A
P
C
Collector Dissipation (T
a
=25°C) 1.2 W
P
C
Collector Dissipation (T
C
=25°C) 20 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
= 120V, I
E
= 0 1 µA
I
EBO
Emitter Cut-off Current V
EB
= 3V, I
C
= 0 1 µA
h
FE1
h
FE2
* DC Current Gain V
CE
= 5V, I
C
= 5mA
V
CE
= 5V, I
C
= 0.3A
35
60
105
140 320
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 1A, I
B
= 0.2A 0.4 0.7 V
V
BE
(sat) * Base-Emitter Satur ation Volt age I
C
= 1A, I
B
= 0.2A 1 1.3 V
f
T
Current Gain Bandwidth Product V
CE
= 5V, I
C
= 0.2A 155 MHz
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f = 1MHz 19 pF
Classification R O Y
h
FE2
60 ~ 120 100 ~ 200 160 ~ 320
KSC2690/2690A
Audio Frequency
High Frequency Power Amplifier
• Complement to KSA1220/KSA1220A
1
TO-126
1. Emitter 2.Collector 3.Base
